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savantic semiconductor product specification silicon npn power transistors 2SD1425 d escription with to-3ph package built-in damper diode high voltage ,high speed low collector saturation voltage applications designed for use in color tv deflection circuits pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 2.5 a i b base current 1.0 a p d total power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 1.56 /w fig.1 simplified outline (to-3ph) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1425 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =200ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =2a; i b =0.6a 8.0 v v besat base-emitter saturation voltage i c =2a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a h fe dc current gain i c =0.5a ; v ce =5v 8 f t transition freuqency i c =0.1a ; v ce =10v;f=1mhz 3 mhz c ob output capacitance i e =0 ; v cb =10v;f=1.0mhz 95 pf v f diode forward voltage i f =2.5a 2.0 v t f fall time i c =2a;i b1 =0.6a 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1425 package outline fig.2 outline dimensions

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